Characterization of Enhancement AlInN/GaN Hemts using Partial P-Type GaN Gate
Keywords:
Enhancement mode (E-mode), HEMT, p-GaN, AlInN/GaNAbstract
This work attempts to characterize the Enhancement mode (E-mode) AlInN/GaN HEMT devices implemented using p-GaN gate for getting positive threshold voltage (Vt). The device channel consists of a lattice-matched wideband Al0.83In0.17N and narrowband GaN layers, along with p-GaN layer below the E-mode device. The 2D Sentaurus TCAD simulation is done using the hydrodynamic model. The simulation model is calibrated with the initially published experimental result. A comprehensive, quantitative investigation of transfer characteristics, transconductance, gate capacitance, gate leakage and RF gain for E-mode devices is done. The E-mode device exhibit a Vt of + 1.0 V. This new device exhibit almost similar transconductance characteristics. The E-mode device shows lower off-state leakage current, higher ION/IOFF ratio and lower SS. These results demonstrate the feasibility for fabricating an E-mode AlInN/GaN HEMT device which is extremely desirable for high speed and high-frequency applications.
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